Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From ?1 to 1 kPa

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). BJT has vertical structure n-p-n type (V-NPN) formed non-deformable area. contains eight piezoresistors located profiled membrane in the areas maximum mechanical stresses. design provides balance between high (S =44.9 mV/V/kPa) fairly low temperature coefficient zero signal (TCZ = 0.094% FS/°C). Additionally, burst P 550 was reached.